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IRF1010ELPbF

International Rectifier

HEXFET Power MOSFET


Description
PD - 95444 Advanced Process Technology l Surface Mount (IRF1010ES) l Low-profile through-hole (IRF1010EL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l IRF1010ESPbF IRF1010ELPbF HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 12mΩ G S Advanced HEXFET® Power MOSFETs from International Rectifier utilize advan...



International Rectifier

IRF1010ELPbF

PDF File IRF1010ELPbF PDF File


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