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FDZ291P

Fairchild Semiconductor
Part Number FDZ291P
Manufacturer Fairchild Semiconductor
Description P-Channel 1.5 V Specified PowerTrench BGA MOSFET
Published May 29, 2007
Detailed Description FDZ291P P-Channel 1.5 V Specified PowerTrench® BGA MOSFET February 2006 FDZ291P P-Channel 1.5 V Specified PowerTrench®...
Datasheet PDF File FDZ291P PDF File

FDZ291P
FDZ291P

Overview
FDZ291P P-Channel 1.
5 V Specified PowerTrench® BGA MOSFET February 2006 FDZ291P P-Channel 1.
5 V Specified PowerTrench® BGA MOSFET General Description Combining Fairchild’s advanced 1.
5V specified PowerTrench process with state of the art BGA packaging, the FDZ291P minimizes both PCB space and RDS(ON).
This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON).
Features • –4.
6 A, –20 V RDS(ON) = 40 mΩ @ VGS = –4.
5 V RDS(ON) = 60 mΩ @ VGS = –2.
5 V RDS(ON) = 160 mΩ @ VGS = –1.
5 V • Occupies only 2.
25 mm2 of PCB ar...


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