INSULATED GATE BIPOLAR TRANSISTOR
Description
PD - 94382D
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
IRGB10B60KD IRGS10B60KD IRGSL10B60KD
VCES = 600V IC = 12A, TC=100°C
Features
Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperatur...
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