LASER DIODE
Description
NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (110 mW MIN)
FEATURES
HIGH OUTPUT POWER: Pf = 180 mW at IFP = 1000 mA, Pulse Conditions: Pulse width (PW) = 10 µs, Duty = 1% LONG WAVELENGTH: λC = 1310 nm
NX7327BF-AA
DESCRIPTION
NEC's NX7327BF-AA is a 1310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) ...
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