LASER DIODE
Description
NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE NX7329BB-AA IN COAXIAL PACKAGE FOR OTDR APPLICATION (25 mW MIN)
FEATURES
HIGH OUTPUT POWER: Pf = 50 mW at IFP = 400 mA, Pulse Condition: Pulse Width (PW) = 10 µs, Duty = 1% LONG WAVELENGTH λC = 1310 nm
DESCRIPTION
NEC's NX7329BB-AA is a 1310 nm Multiple Quantum Well (MQW) structured laser diode coaxial mod...
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