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2N5582

Microsemi Corporation
Part Number 2N5582
Manufacturer Microsemi Corporation
Description (2N5581 / 2N5582) NPN SILICON SWITCHING TRANSISTOR
Published Jun 4, 2007
Detailed Description TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/423 Devices 2N5581 2N5582 Qualified Level JA...
Datasheet PDF File 2N5582 PDF File

2N5582
2N5582

Overview
TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/423 Devices 2N5581 2N5582 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC PT Top, Tstg Value 50 75 6.
0 800 0.
5 2.
0 -55 to +200 Unit Vdc Vdc Vdc mAdc W W 0 C www.
DataSheet4U.
com @ TA = 250C (1) @ TC = 250C (2) Operating & Storage Junction Temperature Range 1) Derate linearly 2.
86 mW/0C for TA > 250C 2) Derate linearly 11.
43 mW/0C for TC > 250C TO-46* (TO-206AB) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol V(BR)CEO ICBO Min.
50 10 10 10 10 Max.
Unit Vdc ηAdc µAdc ηAdc µAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Base Cutoff Current VCB = 60 Vdc VCB = 75 Vdc Emitter-Base Cutoff Current VEB = 4.
0Vdc VEB = 6.
0Vdc IEBO 6 Lake Street, Lawrence, MA 018...


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