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2N5681

Part Number	2N5681
Manufacturer	Microsemi Corporation
Description	(2N5681 / 2N5682) NPN POWER TRANSISTOR
Published	Jun 4, 2007
Detailed Description	TECHNICAL DATA NPN POWER TRANSISTOR SILICON AMPLIFIER Qualified per MIL-PRF-19500/583 Devices 2N5681 2N5682 Qualified Le...
Datasheet	2N5681 PDF File

Overview

TECHNICAL DATA NPN POWER TRANSISTOR SILICON AMPLIFIER Qualified per MIL-PRF-19500/583 Devices 2N5681 2N5682 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS (TA = 25° C unless otherwise noted) 2N5681 Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Temperature Range VCEO VCBO VEBO IC IB PT Top, Tstg Symbol RθJC 100 100 4.
0 1.
0 0.
5 1.
0 10 -65 to +200 2N5682 120 120 4.
0 1.
0 0.
5 1.
0 10 -65 to +200 Units Vdc Vdc Vdc Adc Adc W W °C Unit 0 C www.
DataSheet4U.
com THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 5.
7 mW/0C for TA > +250C 2) Derate linearly 57 mW/0C for TC > +250C Max.
17.
5 TO-39* (TO-205AD) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min.
100 120 1.
0 10 Max.
Unit OFF CHARACTERISTICS Collector-Emitter Breakdo...

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