DatasheetsPDF.com

IRLI620G

International Rectifier
Part Number IRLI620G
Manufacturer International Rectifier
Description Power MOSFET
Published Jun 4, 2007
Detailed Description Previous Datasheet Index Next Data Sheet PD - 9.1235 IRLI620G HEXFET® Power MOSFET Isolated Package High Voltage Iso...
Datasheet PDF File IRLI620G PDF File

IRLI620G
IRLI620G


Overview
Previous Datasheet Index Next Data Sheet PD - 9.
1235 IRLI620G HEXFET® Power MOSFET Isolated Package High Voltage Isolation = 2.
5KVRMS Sink to Lead Creepage Dist.
4.
8mm Logic-Level Gate Drive RDS(ON) Specified at VGS = 4V & 5V Fast Switching Ease of paralleling Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink.
This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
VDSS = 200V RDS(on) = 0.
80Ω ID = 4.
0A www.
DataSheet4U.
com Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 5.
0V Continuous Drain Current, VGS @ 5.
0V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Max.
4.
0 2.
6 16 30 0.
24 ±10 62 4.
0 3.
0 5.
0 -55 to + 150 300 (1.
6mm from case) 10 lbf•in (1.
1N•m) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient Min.
–––– –––– Typ.
–––– –––– Max.
4.
1 65 Units °C/W To Order Revision 0 Previous Datasheet Index Next Data Sheet IRLI620G Electrical Characteristics @ T J = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance G...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)