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AS4SD16M16

Part Number	AS4SD16M16
Manufacturer	Austin Semiconductor
Description	16 Meg x 16 SDRAM Synchronous DRAM Memory
Published	Jun 5, 2007
Detailed Description	SDRAM Austin Semiconductor, Inc. 256 MB: 16 Meg x 16 SDRAM Synchronous DRAM Memory FEATURES • Full Military temp (-55°C ...
Datasheet	AS4SD16M16 PDF File

Overview

SDRAM Austin Semiconductor, Inc.
256 MB: 16 Meg x 16 SDRAM Synchronous DRAM Memory FEATURES • Full Military temp (-55°C to 125°C) processing available • Configuration: 16 Meg x 16 (4 Meg x 16 x 4 banks) • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/precharge • Programmable burst lengths: 1, 2, 4, 8 or full page • Auto Precharge, includes CONCURRENT AUTO PRECHARGE and Auto Refresh Modes • Self Refresh Mode (IT) • 64ms, 8,192-cycle refresh (IT) • <24ms 8,192 cycle recfresh (XT) • WRITE Recovery (tWR = “2 CLK”) • LVTTL-compatible inputs and outputs www.
DataSheet4U.
com • Single +3.
3V ±0.
3V power supply AS4SD16M16 PIN ASSIGNMENT (Top View) 54-Pin TSOP OPTIONS • Plastic Package - OCPL* 54-pin TSOP (400 mil) Timing (Cycle Time) 7.
5ns @ CL = 3 (PC133) or 7.
5ns @ CL = 2 (PC100) MARKING DG No.
901 • -75 • Operating Temperature Ranges -Industrial Temp (-40°C to 85° C) IT -Industrial Plus Temp (-45°C to +105°C) IT+ -Military Temp (-55°C to 125°C) XT*** 16 Meg x 16 Configuration 4 Meg x 16 x 4 banks Refresh Count 8K Row Addressing 8K (A0-A12) Bank Addressing 4 (BA0, BA1) Column Addressing 512 (A0-A8) Note: “\” indicates an active low.
KEY TIMING PARAMETERS SPEED CLOCK ACCESS TIME GRADE FREQUENCY CL = 2** CL = 3** -75 133 MHz – 5.
4ns -75 100 MHz 6ns – *Off-center parting line **CL = CAS (READ) latency ***Consult Factory SETUP TIME 1.
5ns 1.
5ns HOLD TIME 0.
8ns 0.
8ns For more products and information please visit our web site at www.
austinsemiconductor.
com AS4SD16M16 Rev.
1.
0 11/02 Austin Semiconductor, Inc.
reserves the right to change products or specifications without notice.
1 SDRAM Austin Semiconductor, Inc.
GENERAL DESCRIPTION The 256MB SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits.
It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are ...

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