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IRGB30B60K

International Rectifier
Part Number IRGB30B60K
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Jun 5, 2007
Detailed Description PD - 94799 INSULATED GATE BIPOLAR TRANSISTOR C IRGB30B60K IRGS30B60K IRGSL30B60K VCES = 600V IC = 50A, TC=100°C at TJ=...
Datasheet PDF File IRGB30B60K PDF File

IRGB30B60K
IRGB30B60K

Overview
PD - 94799 INSULATED GATE BIPOLAR TRANSISTOR C IRGB30B60K IRGS30B60K IRGSL30B60K VCES = 600V IC = 50A, TC=100°C at TJ=175°C Features • • • • • Low VCE (on) Non Punch Through IGBT Technology.
10µs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
Maximum Junction Temperature rated at 175°C.
G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ.
= 1.
95V Benefits • Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
TO-220AB IRGB30B60K www.
DataSheet4U.
com D2 Pak IRGS30B60K TO-262 IRGSL30B60K Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VISOL VG...


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