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IRLR8503

International Rectifier
Part Number IRLR8503
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Jun 5, 2007
Detailed Description IRLPRD-893580393C IRLR8503 • N-Channel Application-Specific MOSFET • Ideal for CPU Core DC-DC Converters • Low Conducti...
Datasheet PDF File IRLR8503 PDF File

IRLR8503
IRLR8503

Overview
IRLPRD-893580393C IRLR8503 • N-Channel Application-Specific MOSFET • Ideal for CPU Core DC-DC Converters • Low Conduction Losses • Minimizes Parallel MOSFETs for high current applications • 100% RG Tested HEXFET® MOSFET for DC-DC Converters D Description G This new device employs advanced HEXFET Power MOSFET technology to achieve very low on-resistance.
The reduced conduction losses makes it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors.
S D-Pak The IRLR8503 has been optimized and is 100% tested for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dtinduced turn-on immunity.
The IRLR8503 offers an extremely low combination of Qsw & RDS(on) for reduced losses in control FET applications.
The package is designed for vapor phase, infra-red, convection, or wave soldering techniques.
Power dissipation of greater than 2W is possible in a typical PCB mount application.
DEVICE RATINGS (MAX.
Values) VDS RDS(on) QG QSW QOSS IRLR8503 30V 18 mΩ 20 nC 8 nC 29.
5 nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current ™ Pulsed Drain Current TC = 25°C TC = 90°C Power Dissipation gÃÃÃÃÃÃÃÃÃÃÃTC = 25°C TC = 90°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) ™ Pulsed Source Current Thermal Resistance Parameter eÃh Maximum Junction-to-Ambient h Maximum Junction-to-Lead Symbol VDS VGS ID IDM PD TJ , TSTG IS ISM Symbol RθJA RθJL www.
irf.
com IRLR8503 30 ±20 44 32 196 62 30 -55 to 150 15 196 Units V A W °C A Typ Max Units ––– 50 °C/W ––– 2.
0 1 5/26/05 IRLR8503 Electrical Characteristics Parameter Symbol Min Typ Max Units Conditions Drain-to-Source Breadown Voltage* Static Drain-Source On-Resistance* Gate Threshold Voltage* Drain-Source Leakage Current Gate-Source Leakage Current* Total Gate Charge, Control FET* Total Gate Charge, Synch FET* Pre-Vth Gate-to-Sou...


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