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NZT605

NPN Darlington Transistor

Description

NZT605 NPN Darlington Transistor January 2007 NZT605 NPN Darlington Transistor This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. Sourced from process 06. 4 3 2 1 SOT-223 1. Base 2.4. Collector 3. Emitter Absolute Maximum Ratings * T Symbol VCEO VCBO VEBO www.DataSheet4U.co...

Fairchild Semiconductor

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