DatasheetsPDF.com

ZVN4206GV

Zetex Semiconductors
Part Number ZVN4206GV
Manufacturer Zetex Semiconductors
Description N-Channel MOSFET
Published Jun 12, 2007
Detailed Description SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - APRIL 1998 FEATURES * 60 Volt VDS * RDS(on)= 1Ω * Repetiti...
Datasheet PDF File ZVN4206GV PDF File

ZVN4206GV
ZVN4206GV

Overview
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - APRIL 1998 FEATURES * 60 Volt VDS * RDS(on)= 1Ω * Repetitive avalanche rating * No transient protection required * Characterised for 5V logic drive APPLICATIONS * Automotive relay drivers * Stepper motor driver PARTMARKING DETAIL ZVN4206V ZVN4206GV D S D G ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at T amb = 25°C Pulsed Drain Current Gate-Source Voltage www.
DataSheet4U.
com SYMBOL V DS ID I DM V GS P tot I SD I AR E AR T j:T stg VALUE 60 1 8 ± 20 2 600 600 15 -55 to +150 UNIT V A A V W mA mA mJ °C Power Dissipation at T amb = 25°C Continuous Body Diode Current at T amb = 25°C Avalanche Current - Repetitive Avalanche Energy - Repetitive Operating and Storage Temperature Range ZVN4206GV ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current (1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) SYMBOL MIN.
BV DSS V GS(th) I GSS I DSS I D(on) R DS(on) g fs C iss C oss C rss t d(on) tr t d(off) tf 300 100 60 20 8 12 12 15 3 1 1.
5 60 1.
3 3 100 10 100 MAX.
UNIT CONDITIONS.
V V nA µA µA A Ω Ω mS pF pF pF ns ns ns ns V DD ≈ 25V, I D=1.
5A, V GEN =10V V DS=25V, V GS=0V, f=1MHz I D=1mA, V GS=0V I D =1mA, V DS= V GS V GS= ± 20V, V DS=0V V DS=60V, V GS=0V V DS=48V, V GS=0V, T=125°C (2) V DS=25V, V GS=10V V GS=10V, I D=1.
5A V GS=5V, I D=0.
5A V DS=25V,I D=1.
5A (1) Measured under pulsed conditions.
Width=300µs.
Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator ZVN4206GV TYPICAL CHARACTERISTICS 10 VGS= 20V 16V 14V 12V 10V 9V 8V 7V 2 6V 5V 4.
5V...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)