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APT1001R6BFLL

Advanced Power Technology
Part Number APT1001R6BFLL
Manufacturer Advanced Power Technology
Description POWER MOS 7 R FREDFET
Published Jun 13, 2007
Detailed Description Typical Performance Curves APT1001R6BFLL_SFLL APT1001R6BFLL APT1001R6SFLL 1000V 8A 1.60Ω D3PAK POWER MOS 7 ® R FRE...
Datasheet PDF File APT1001R6BFLL PDF File

APT1001R6BFLL
APT1001R6BFLL

Overview
Typical Performance Curves APT1001R6BFLL_SFLL APT1001R6BFLL APT1001R6SFLL 1000V 8A 1.
60Ω D3PAK POWER MOS 7 ® R FREDFET TO-247 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg.
Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
• Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM www.
DataSheet4U.
com • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package • FAST RECOVERY BODY DIODE D G S All Ratings: TC = 25°C unless otherwise specified.
APT1001R6BFLL_SFLL UNIT Volts Amps Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 1000 8 32 ±30 ±40 266 2.
13 -55 to 150 300 4 16 4 VGS VGSM PD TJ,TSTG TL IAR EAR EAS Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 425 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 1000 1.
600 250 1000 ±100 3 5 (VGS = 10V, ID = 4A) Ohms µA nA Volts 4-2004 050-7126 Rev A Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper H...


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