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FB9N60A

International Rectifier
Part Number FB9N60A
Manufacturer International Rectifier
Description IRFB9N60A
Published Jul 1, 2007
Detailed Description PD - 91811 IRFB9N60A HEXFET® Power MOSFET l l l l l Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Eas...
Datasheet PDF File FB9N60A PDF File

FB9N60A
FB9N60A

Overview
PD - 91811 IRFB9N60A HEXFET® Power MOSFET l l l l l Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive Requirements D VDSS = 600V G S RDS(on) = 0.
75Ω ID = 9.
2A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
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