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IRG4PH20K

International Rectifier
Part Number IRG4PH20K
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Jul 4, 2007
Detailed Description PD -91776 IRG4PH20K INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control,...
Datasheet PDF File IRG4PH20K PDF File

IRG4PH20K
IRG4PH20K

Overview
PD -91776 IRG4PH20K INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations C Short Circuit Rated UltraFast IGBT VCES = 1200V G E VCE(on) typ.
= 3.
17V @VGE = 15V, IC = 5.
0A n-channel Benefits • As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT • Latest generation 4 IGBT's offer highest power density motor controls possible www.
DataSheet4U.
com TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy ƒ Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
1200 11 5.
0 22 22 10 ±20 130 60 24 -55 to +150 300 (0.
063 in.
(1.
6mm) from case) 10 lbf•in (1.
1N•m) Units V A µs V mJ W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ.
––– 0.
24 ––– 6 (0.
21) Max.
2.
1 ––– 40 ––– Units °C/W g (oz) www.
irf.
com 1 6/25/98 IRG4PH20K Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS Parameter Min.
Typ.
Collector-to-Emitter Breakdown Voltage 1200 — Emitter-to-Collector Breakdown Voltage „ 18 — ∆V(BR)CES/∆TJ Temperature Coeff.
of Breakdown Voltage — 1.
13 — 3.
17 VCE(ON) Collector-to-Emitter Saturation Voltage — 4.
04 — 2.
84 VGE(th) Gate Thresh...


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