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APTM100H45ST

Advanced Power Technology
Part Number APTM100H45ST
Manufacturer Advanced Power Technology
Description MOSFET Power Module
Published Jul 7, 2007
Detailed Description APTM100H45ST Full bridge Series & parallel diodes MOSFET Power Module VBUS CR1A CR3A VDSS = 1000V RDSon = 450mΩ max @ T...
Datasheet PDF File APTM100H45ST PDF File

APTM100H45ST
APTM100H45ST

Overview
APTM100H45ST Full bridge Series & parallel diodes MOSFET Power Module VBUS CR1A CR3A VDSS = 1000V RDSon = 450mΩ max @ Tj = 25°C ID = 18A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Q1 CR1B CR3B Q3 G1 S1 CR2A O UT1 OUT2 CR4A G3 S3 Q2 CR2B CR4B Q4 G2 S2 NTC1 0/VBUS NTC2 G4 S4 www.
DataSheet4U.
com Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile G3 S3 G4 S4 OUT2 VBUS 0/VBUS OUT1 S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C These Devices are sensitive to Electrostatic Discharge.
Proper Handing Procedures Should Be Followed.
APT website – http://www.
advancedpower.
com 1–6 APTM100H45ST – Rev 2 Max ratings 1000 18 14 72 ±30 450 357 18 50 2500 Unit V A V mΩ W A mJ June, 2004 APTM100H45ST All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 250µA Min 1000 VGS = 0V,VDS= 1000V VGS ...


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