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APTM10DAM05T

Advanced Power Technology
Part Number APTM10DAM05T
Manufacturer Advanced Power Technology
Description MOSFET Power Module
Published Jul 7, 2007
Detailed Description APTM10DAM05T Boost chopper MOSFET Power Module VBUS VBUS SENSE NTC2 VDSS = 100V RDSon = 4.5mΩ typ @ Tj = 25°C ID = 278A...
Datasheet PDF File APTM10DAM05T PDF File

APTM10DAM05T
APTM10DAM05T

Overview
APTM10DAM05T Boost chopper MOSFET Power Module VBUS VBUS SENSE NTC2 VDSS = 100V RDSon = 4.
5mΩ typ @ Tj = 25°C ID = 278A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile CR1 OUT Q2 G2 S2 0/VBU S NTC1 www.
DataSheet4U.
com G2 S2 OUT VBUS 0/VBUS OUT VBUS SENSE S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C mJ These Devices are sensitive to Electrostatic Discharge.
Proper Handing Procedures Should Be Followed.
APT website – http://www.
advancedpower.
com 1-6 APTM10DAM05T– Rev 0 May, 2005 Tc = 25°C Max ratings 100 278 207 1100 ±30 5 780 100 50 3000 Unit V A V mΩ W A APTM10DAM05T All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V Min Tj = 25°C Tj = 125°C Typ VGS = 10V, ID = 125A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V 4.
5 2 Max 200 1000 5 4 ±200 Unit µA mΩ V nA Dy...


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