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APTM20UM04S-ALN

Part Number	APTM20UM04S-ALN
Manufacturer	Advanced Power Technology
Description	MOSFET Power Module
Published	Jul 7, 2007
Detailed Description	APTM20UM04S-AlN Single switch Series & parallel diodes MOSFET Power Module SK CR1 D VDSS = 200V RDSon = 4mΩ max @ Tj = ...
Datasheet	APTM20UM04S-ALN PDF File

Overview

APTM20UM04S-AlN Single switch Series & parallel diodes MOSFET Power Module SK CR1 D VDSS = 200V RDSon = 4mΩ max @ Tj = 25°C ID = 417A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for improved thermal performance S Q1 G www.
DataSheet4U.
com S D SK G Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C These Devices are sensitive to Electrostatic Discharge.
Proper Handing Procedures Should Be Followed.
APT website – http://www.
advancedpower.
com 1–6 APTM20UM04S– -AlN Rev 0 Max ratings 200 417 310 1670 ±30 4 1560 100 50 3000 Unit V A V mΩ W A mJ July, 2004 APTM20UM04S-AlN All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 500µA Min 200 Tj = 25°C VGS = 0V,VDS = 160V Tj = 125°C VGS = 10V, ID = 208.
5A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0V VGS = 0V,VDS = 200V Typ Max 500 2000 4 5 ±200 Unit V µA mΩ V nA 3 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qg...

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