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MWE6IC9100NR1

Part Number	MWE6IC9100NR1
Manufacturer	Freescale Semiconductor
Description	RF LDMOS Wideband Integrated Power Amplifiers
Published	Jul 8, 2007
Detailed Description	ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Ampli...
Datasheet	MWE6IC9100NR1 PDF File

Overview

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on--chip matching that makes it usable from 869 to 960 MHz.
This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations.
Final Application • Typical GSM Performance: VDD = 26 Volts, IDQ1 = 120 mA, IDQ2 = 950 mA, Pout = 100 Watts CW, f = 960 MHz Power Gain — 33.
5 dB Power Added Efficiency — 54% GSM EDGE Application • Typical GSM EDGE Performance: 870PmowAe, rPGouatin= 50 Watts Avg.
, — 35.
5 dB Full VFDreDq=ue2n8cVyoBltasn, dID(Q8169=--2936...

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MWE6IC9100NBR1 RF LDMOS Wideband Integrated Power Amplifiers - Freescale Semiconductor
MWE6IC9100NR1 RF LDMOS Wideband Integrated Power Amplifiers - Freescale Semiconductor

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