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IRF7329PBF

International Rectifier
Part Number IRF7329PBF
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Jul 10, 2007
Detailed Description PD - 95042 IRF7329PbF HEXFET® Power MOSFET l l l l l l Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET...
Datasheet PDF File IRF7329PBF PDF File

IRF7329PBF
IRF7329PBF


Overview
PD - 95042 IRF7329PbF HEXFET® Power MOSFET l l l l l l Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (<1.
8mm) Available in Tape & Reel Lead-Free VDSS -12V RDS(on) max (mW) 17@VGS = -4.
5V 21@VGS = -2.
5V 30@VGS = -1.
8V ID ±9.
2A ±7.
4A ±4.
6A Description New P-Channel HEXFET ® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2...



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