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PD - 9.1236
IRLI630G
HEXFET® Power MOSFET
Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. 4.8mm Logic-Level Gate Drive RDS(ON) Specified at VGS = 4V & 5V Fast Switching Ease of paralleling Description
Third Generation HEXFETs from International Rectifier provide the designer with the...
