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RD00HHS1

Mitsubishi Electric
Part Number RD00HHS1
Manufacturer Mitsubishi Electric
Description RoHS Compliance
Published Jul 12, 2007
Detailed Description MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HHS1 4.4+/-0.1 1.6+/-0.1 LO...
Datasheet PDF File RD00HHS1 PDF File

RD00HHS1
RD00HHS1

Overview
MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HHS1 4.
4+/-0.
1 1.
6+/-0.
1 LOT No.
3.
9+/-0.
3 3 1.
5+/-0.
1 0.
1 RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor 30MHz,0.
3W OUTLINE DRAWING 1.
5+/-0.
1 RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.
TYPE NAME FEATURES High power gain Pout>0.
3W, Gp>19dB @Vdd=12.
5V,f=30MHz 0.
8 MIN 2.
5+/-0.
1 1 2 1.
5+/-0.
1 0.
4 +0.
03 -0.
05 Terminal No.
1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets.
0.
4+/-0.
07 0.
5+/-0.
07 0.
4+/-0.
07 0.
1 MAX RoHS COMPLIANT RD00HHS1-101,T113 is a RoHS c...


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