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MA4SW410

Tyco Electronics
Part Number MA4SW410
Manufacturer Tyco Electronics
Description SP4T Monolithic PIN Diode Switch
Published Jul 24, 2007
Detailed Description www.DataSheet4U.com SP4T Monolithic PIN Diode Switch Features n n n n V 1.00 MA4SW410 Outline Drawing Ultra Broad B...
Datasheet PDF File MA4SW410 PDF File

MA4SW410
MA4SW410

Overview
www.
DataSheet4U.
com SP4T Monolithic PIN Diode Switch Features n n n n V 1.
00 MA4SW410 Outline Drawing Ultra Broad Bandwidth : 50 MHz to 26 GHz 0.
9 Insertion Loss , 34 dB Isolation at 20 GHz 50 ns Switching Speed Reliable, Fully Monolithic, Glass Encapsulated Construction Description The MA4SW410 is a SP4T Series-Shunt Broad Band Switch made with M/A-COM’s Unique HMICTM (Heterolithic Microwave Integrated Circuit) Process, US Patent 5,268,310.
This process allows the incorporation of silicon pedestals that form Series and Shunt diodes or vias by imbedding them in a low loss, low dispersion glass.
This hybrid combination of Silicon and Glass gives HMIC Switches exceptional low loss and remarkable high isolation through low millimeter-wave frequencies.
Applications These High Performance Switches are suitable for use in Multi-Band ECM, Radar, and Instrumentation Control Circuits where High Isolation to Insertion Loss Ratios are Required.
With a Standard +5 V/-5 V, TTL Controlled PIN Diode Driver, 50 nS Switching Speeds are Achieved.
Nominal Die Dimensions Inches Dim A B C D Nominal .
066 .
047 .
054 .
012 .
043 .
009 .
004 .
004 .
033 .
061 Millimeters Nominal 1.
67 1.
17 1.
37 0.
31 1.
08 0.
22 0.
11 0.
11 0.
84 1.
56 Absolute Maximum Ratings 1 E F G H I J @ TA = +25 °C (unless otherwise specified) Parameter Operating Temperature Storage Temperature RF C.
W.
Incident Power (+/-20 mA) Bias Current Forward Applied Voltage (Reverse) Value -65 °C to +125 °C 65 °C to +150 °C + 30 dBm +/-50 mA 25 Volts Note: Bond Pads are 0.
12 mm x 0.
12 mm 1.
Exceeding any of these values may result in permanent damage SP4T PIN Diode Switch Electrical Specifications @ TA = + 25 °C, +/- 20 mA Bias Current (On-Wafer Measurements) Parameters Insertion Loss Isolation Input Return Loss Output Return Loss Switching Speed1 MA4SW410 V 1.
00 Frequency 20 GHz 20 GHz 20 GHz 20 GHz 10 GHz Minimum Nominal 0.
9 Maximum 1.
3 Units dB dB dB dB nS 28 34 15 15 50 1.
Typical Switching Speed is measured from 10...


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