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MA4VAT907-1061T

Tyco Electronics
Part Number MA4VAT907-1061T
Manufacturer Tyco Electronics
Description High IIP3 PIN Diode Variable Attenuator
Published Jul 24, 2007
Detailed Description www.DataSheet4U.com High IIP3 PIN Diode Variable Attenuator 0.80-1.0 GHz Features Bandwidth: 0.80 GHz to 1.0 GHz 1.0 dB...
Datasheet PDF File MA4VAT907-1061T PDF File

MA4VAT907-1061T
MA4VAT907-1061T


Overview
www.
DataSheet4U.
com High IIP3 PIN Diode Variable Attenuator 0.
80-1.
0 GHz Features Bandwidth: 0.
80 GHz to 1.
0 GHz 1.
0 dB Insertion Loss, Typical 12 dB Return Loss, Typical 25 dB Attenuation, Typical 50 dBm Input IP3, Typical (1MHz Offset, @+0dBm Pinc) • 0 – 3.
0 Volts Control Voltage @3.
3mA Typical • RoHs Compliant • • • • • MA4VAT907-1061T V3 Extra Features • Covers the following Bands: • GSM • AMPS • Usable Bandwidth: 0.
60 GHz to 1.
20 GHz • 1.
5 dB Insertion Loss, Typical • 1.
8:1 VSWR, Typical • 18.
5 dB Attenuation, Typical SOIC-8 PIN Configuration (Topview) PIN 1 2 Function DC1 GND GND RFin/out RFout/in GND GND DC2 Symetrical as RF Input/Ouput Symetrical as RF Input/Ouput Comments Description and Applications M/A-COM’s MA4VAT907-1061T is a HMIC PIN Diode Variable Attenuator which utilizes an integrated 90 degree 3dB hybrid with a pair of Silicon PIN Diodes to perform the required attenuation function as D.
C.
Voltage (Current) is applied.
This device operates from 0 to 2.
77Volts at 3.
0mA typical control current for maximum attenuation.
The user can add external biasing resistors to the bias ports for higher voltage requirements as required.
M/A-COM’s MA4VAT907-1061T PIN Diode Variable Attenuator is designed for AGC Circuit Applications requiring: • Lower Insertion Loss • Lower distortion through attenuation • Larger dynamic range for wide spread spectrum applications 3 4 5 6 7 8 Absolute Maximum Ratings @ +25 °C Parameter Operating Temperature Storage Temperature Junction Temperature RF C.
W.
Incident Power Reversed Current @ -30 V Control Current Maximum Ratings -40 °C to +85 °C -65 °C to +150 °C +175 °C +33 dBm C.
W.
50nA 50 mA per Diode Notes: 1.
All the above values are at +25 °C, unless otherwise noted.
2.
Exceeding these limits may cause permanent damage.
1 M/A-COM Inc.
and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
M/A-COM makes no warranty, representation or guarantee regarding th...



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