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MAPLST2122-015CF

Part Number	MAPLST2122-015CF
Manufacturer	Tyco Electronics
Description	RF Power Field Effect Transistor
Published	Jul 26, 2007
Detailed Description	www.DataSheet4U.com RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 15W, 28V 8/20/03 Preliminary MAPLST2122...
Datasheet	MAPLST2122-015CF PDF File

Overview

www.
DataSheet4U.
com RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 15W, 28V 8/20/03 Preliminary MAPLST2122-015CF Features Designed for W-CDMA base station applications in the 2.
1 to 2.
2 GHz Frequency Band.
Suitable for TDMA, CDMA, and multicarrier power amplifier applications.
Q Q Q Package Style 15W Output Power at P1dB (CW) 12dB Minimum Gain at P1dB (CW) W-CDMA Typical Performance: (28VDC, -45dBc ACPR, 5MHz offset, 4.
096MHz BW) Q Output Power: 2.
2W (typ.
) Q Gain: 13dB (typ.
) Q Efficiency: 17% (typ.
) 10:1 VSWR Ruggedness (CW @ 15W, 28V, 2110MHz) MAPLST2122-015CF Q Maximum Ratings Parameter Drain—Source Voltage Gate—Source Voltage Total Power Dissipation @ TC = 25 °C Stor...

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MAPLST2122-015CF RF Power Field Effect Transistor - Tyco Electronics

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