RF Power Field Effect Transistor
Description
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RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 60W, 28V
4/6/2005
Preliminary
MAPLST2122-060CF
Features
Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications.
Q Q Q
Package Style
60W output power at P1dB (CW) 12dB Minimum G...
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