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NE3509M04

CEL
Part Number NE3509M04
Manufacturer CEL
Description L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Published Jul 28, 2007
Detailed Description www.DataSheet4U.com PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3509M04 L to S BAND LOW...
Datasheet PDF File NE3509M04 PDF File

NE3509M04
NE3509M04

Overview
www.
DataSheet4U.
com PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3509M04 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES - Super Low Noise Figure & Associated Gain : NF=0.
4dB TYP.
Ga=17.
5dB TYP.
@f=2GHz, VDS=2V,ID=10mA - Flat-lead 4-pin tin-type super mini-mold(M04) package (Pb-Free T.
) APPLICATIONS - Satellite Radio(SDARS, DMB, etc.
) antenna LNA - GPS antenna LNA - LNA for Micro-wave communication system ORDERING INFORMATION Part Number NE3509M04 NE3509M04-T2 Order Number NE3509M04-A NE3509M04-T2-A Quantity 50pcs (Non reel) 3 Kpcs/reel V80 Marking Supplying Form - 8 mm wide emboss taping - Pin1(Source), Pin2(Drain) face the perforation side of the tape Remark To order evaluation samples, please contact your local NEC sales office.
Part number for sample order: NE3509M04 ABSOLUTE MAXIMUM RATINGS ( TA =+ 25 °C ) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature SYMBOL VDS VGS ID IG Ptot Tch Tstg Note RATINGS 4.
0 -3.
0 IDSS 200 150 +150 - 65 to +150 UNIT V V mA µA mW °C °C Note Mounted on 1.
08cm2 X 1.
0mm(t) glass epoxy PCB Caution : Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Document No.
PEJ0V0PM00 (10th edition) Date Published October 2005 CP(K) © NEC Compound Semiconductor Devices 2005 NE3509M04 RECOMMENDED OPERATING CONDITIONS(TA = +25 °C) PARAMETER Drain to Source Voltage Drain Current Input Power SYMBOL VDS ID Pin MIN.
------- TYP.
2 10 --- MAX.
3 20 0 UNIT V mA dB m ELECTRICAL CHARACTERISTICS PARAMETER Gate to Source Leak Current Saturated Drain Current Gate to Source Cutoff Voltage Trans conductance Noise Figure Associated Gain Output Power at 1dB Gain Compression Point IGSO IDSS VGS(off) gm NF Ga Po(1dB)...


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