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NESG2101M16

Part Number	NESG2101M16
Manufacturer	CEL
Description	NPN SiGe HIGH FREQUENCY TRANSISTOR
Published	Jul 31, 2007
Detailed Description	www.DataSheet4U.com PRELIMINARY DATA SHEET NEC's NPN SiGe NESG2101M16 HIGH FREQUENCY TRANSISTOR FEATURES • • • HIGH BR...
Datasheet	NESG2101M16 PDF File

Overview

www.
DataSheet4U.
com PRELIMINARY DATA SHEET NEC's NPN SiGe NESG2101M16 HIGH FREQUENCY TRANSISTOR FEATURES • • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz LOW NOISE FIGURE: NF = 0.
9 dB at 2 GHz NF = 0.
6 dB at 1 GHz HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at 2 GHz LOW PROFILE M16 PACKAGE: 6-pin lead-less minimold M16 • • DESCRIPTION NEC's NESG2101M16 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise ampliﬁers, medium power ampliﬁers, and oscillators ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS P1dB GL NF Ga NF Ga MSG |S21E| fT Cre ICBO DC IEBO hFE Notes: 2 NESG2101M16 M16 UNITS dBm dB dB dB dB dB dB dB GHz pF nA nA 130 190 14.
5 11.
5 14 11.
0 MIN TYP 21 15 0.
9 13.
0 0.
6 19.
0 17.
0 13.
5 17 0.
4 0.
5 100 100 260 1.
2 MAX PARAMETERS AND CONDITIONS Output Power at 1 dB Compression Point VCE = 3.
6 V...

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