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IXGR60N60U1

IXYS Corporation
Part Number IXGR60N60U1
Manufacturer IXYS Corporation
Description LowV-CE(sat) IGBT
Published Aug 6, 2007
Detailed Description www.DataSheet4U.com Low VCE(sat) IGBT with Diode ISOPLUS247TM IXGR 60N60U1 VCES IC25 VCE(sat) = = = 600 V 75 A 1.7 ...
Datasheet PDF File IXGR60N60U1 PDF File

IXGR60N60U1
IXGR60N60U1

Overview
www.
DataSheet4U.
com Low VCE(sat) IGBT with Diode ISOPLUS247TM IXGR 60N60U1 VCES IC25 VCE(sat) = = = 600 V 75 A 1.
7 V (Electrically Isolated Back Surface) Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC100 ICM Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms Maximum Ratings 600 600 ±20 ±30 75 60 200 ICM = 100 300 -55 .
.
+ 150 150 -55.
.
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+ 150 V V V V A A A A W °C °C °C °C V g ISOPLUS247TM G C E Isolated back surface* G = Gate, E = Emitter, * Patent pending Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low collec...


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