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BAT54CM

NXP
Part Number BAT54CM
Manufacturer NXP
Description Schottky barrier double diode
Published Aug 13, 2007
Detailed Description www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BAT54CM Schottky barrier double diode Product specifica...
Datasheet PDF File BAT54CM PDF File

BAT54CM
BAT54CM

Overview
www.
DataSheet4U.
com DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BAT54CM Schottky barrier double diode Product specification 2003 Nov 11 Philips Semiconductors Product specification Schottky barrier double diode FEATURES • Low forward voltage • Leadless ultra small plastic package (1.
0 × 0.
6 × 0.
5 mm) • Boardspace 1.
17 mm2 (approx.
10% of SOT23) • Power dissipation comparable to SOT23.
APPLICATIONS • Ultra high-speed switching • Voltage clamping • Protection circuits • Mobile communications, digital (still) cameras, PDAs and PCMCIA cards.
DESCRIPTION Planar Schottky barrier double diode encapsulated in a SOT883 leadless ultra small plastic package.
Top view handbook, halfpage BAT54CM PINNING PIN 1 2 3 anode (a1) anode (a2) common cathode DESCRIPTION 1 3 2 cathode mark MARKING 1 TYPE NUMBER BAT54CM MARKING CODE S3 3 2 Bottom view MLE232 Fig.
1 Simplified outline (SOT883) and symbol.
ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BAT54CM − DESCRIPTION leadless ultra small plastic package; 3 solder lands; body 1.
0 × 0.
6 × 0.
5 mm VERSION SOT883 2003 Nov 11 2 Philips Semiconductors Product specification Schottky barrier double diode LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL VR IF IFRM IFSM Tstg Tj Ptot Note 1.
Refer to SOT883 standard mounting conditions (footprint); FR4 with 60 µm copper strip line.
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 µm copper strip line.
Soldering Reflow soldering is the only recommended soldering method.
ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified.
SYMBOL Per diode VF forward voltage see Fig.
2; IF = 0.
1 mA IF = 1 mA IF = 10 mA IF = 30 mA IF = 100 mA IR Cd Note 1.
Pulsed test: tp ≤ 300 µs; δ ≤ 0.
02.
continuous reverse current diode capacitance VR = 25 V; note 1; see Fig.
3 f = 1 MHz; VR = 1 V; see Fig.
4 240 320 400 500 800 2 10 PARAMETER CONDITIONS MAX.
PARAMETER thermal resistance from junc...


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