TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
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DC COMPONENTS CO., LTD.
R
DXT5551
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose applications requiring high breakdown voltages.
SOT-89
.066(1.70) .059(1.50) .063(1.60) .055(1.40)
Pinning
1 = Base 2 = Collector 3 = Emitter
Absolute Maximum Ratings(TA=25o...
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