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LB123T

Part Number	LB123T
Manufacturer	Dc Components
Description	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Published	Aug 14, 2007
Detailed Description	www.DataSheet4U.com DC COMPONENTS CO., LTD. R LB123T DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXI...
Datasheet	LB123T PDF File

Overview

www.
DataSheet4U.
com DC COMPONENTS CO.
, LTD.
R LB123T DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high voltage, high speed switching circuits, and amplifier applications .
Pinning 1 = Emitter 2 = Collector 3 = Base .
041(1.
05) .
037(0.
95) .
154(3.
91) .
150(3.
81) TO-126 .
304(7.
72) .
285(7.
52) .
105(2.
66) .
095(2.
41) .
055(1.
39) .
045(1.
14) .
152(3.
86) .
138(3.
50) Absolute Maximum Ratings(TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pluse) Total Power Dissipation Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o o C) Ra...

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