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PD - 94575A
INSULATED GATE BIPOLAR TRANSISTOR
Features
Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
C
IRGB6B60K IRGS6B60K IRGSL6B60K
VCES = 600V IC = 7.0A, TC=100°C
G E
tsc > 10µs, TJ=150°C
Benefits
Benchmark Efficiency for Motor Con...
