INSULATED GATE BIPOLAR TRANSISTOR
Description
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PD- 95897
IRGP20B120U-EP
INSULATED GATE BIPOLAR TRANSISTOR
Features
UltraFast Non Punch Through (NPT) Technology 10 µs Short Circuit capability Square RBSOA Positive VCE(on) Temperature Coefficient Extended lead TO-247 package Lead-Free
UltraFast IGBT
C
VCES = 1200V
G E
VCE(on) typ. = 3.05V
VGE = 15V, IC = 20A, 25°C
Benef...
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