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IRHLF77110

International Rectifier
Part Number IRHLF77110
Manufacturer International Rectifier
Description (IRHLF77110 / IRHLF73110) POWER MOSFET
Published Aug 28, 2007
Detailed Description www.DataSheet4U.com PD-97062 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number...
Datasheet PDF File IRHLF77110 PDF File

IRHLF77110
IRHLF77110

Overview
www.
DataSheet4U.
com PD-97062 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level RDS(on) IRHLF77110 100K Rads (Si) 0.
30Ω IRHLF73110 300K Rads (Si) 0.
30Ω ID 6.
0A 6.
0A IRHLF77110 100V, N-CHANNEL TECHNOLOGY ™ T0-39 International Rectifier’s R7TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments.
The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation.
This is achieved while maintaining single event gate rupture and single event burnout immunity.
These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers.
Features: n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 4.
5V, TC=25°C ID @ VGS = 4.
5V, TC=100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max.
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 6.
0 3.
7 24 23 0.
18 ±10 43 6.
0 2.
3 4.
9 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns °C 300 (0.
063in/1.
6mm from case for 10s) 0.
98 (Typical) g www.
irf.
com 1 12/27/06 IRHLF77110 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS / ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage ∆VGS(th)/∆TJ Gate ...


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