PNP EPITAXIAL PLANAR SILICON TRANSISTOR
Description
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ISSUED DATE :2005/05/06 REVISED DATE :
GI5706
Description Features
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
The GI5706 is designed high current switching applications. *Large current capacitance *Low collector-to-emitter saturation voltage *High-speed switching *High allowable power dissipation
Package Dimensions TO-251
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