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GJ5706

Part Number	GJ5706
Manufacturer	GTM
Description	NPN HIGH SPEED SWITCHING TRANSISTOR
Published	Sep 5, 2007
Detailed Description	www.DataSheet4U.com ISSUED DATE :2005/05/06 REVISED DATE : GJ5706 Description Features NPN EPITAXIAL PLANAR SILICON TR...
Datasheet	GJ5706 PDF File

Overview

www.
DataSheet4U.
com ISSUED DATE :2005/05/06 REVISED DATE : GJ5706 Description Features NPN EPITAXIAL PLANAR SILICON TRANSISTOR The GJ5706 is designed high current switching applications.
*Large current capacitance *Low collector-to-emitter saturation voltage *High-speed switching *High allowable power dissipation Package Dimensions TO-252 REF.
A B C D E F S Millimeter Min.
Max.
6.
40 6.
80 5.
20 5.
50 6.
80 7.
20 2.
40 3.
00 2.
30 REF.
0.
70 0.
90 0.
60 0.
90 REF.
G H J K L M R Millimeter Min.
Max.
0.
50 0.
70 2.
20 2.
40 0.
45 0.
55 0 0.
15 0.
90 1.
50 5.
40 5.
80 0.
80 1.
20 Absolute Maximum Ratings (Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Collector to Emitter Voltage Emitt...

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GJ5706 NPN HIGH SPEED SWITCHING TRANSISTOR - GTM

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