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HAT2105T

Renesas Technology
Part Number HAT2105T
Manufacturer Renesas Technology
Description Silicon N-Channel MOSFET
Published Sep 11, 2007
Detailed Description HAT2105T Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4 V gate drive ...
Datasheet PDF File HAT2105T PDF File

HAT2105T
HAT2105T

Overview
HAT2105T Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4 V gate drive • High density mounting Outline RENESAS Package code: PTSP0008JB-B (Package name: TSSOP-8 ) 87 6 5 123 4 1 8 D D 4 5 G G S3 MOS1 S6 MOS2 REJ03G0384-0200 Rev.
2.
00 Aug 06, 2007 1, 8 Drain 3, 6 Source 4, 5 Gate 2, 7 NC Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS 200 Gate to source voltage VGSS ±15 Drain current Drain peak current ID 0.
5 ID (pulse)Note1 2 Body-drain diode reverse drain current IDR 0.
5 Channel dissipation PchNote 2 1 PchNote 3 1.
5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.
6 mm), PW ≤ 10 s 3.
2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.
6 mm), PW ≤ 10 s (Ta = 25°C) Unit V V A A A W W °C °C REJ03G0384-0200 Rev.
2.
00 ...


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