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NTE362

NTE Electronics
Part Number NTE362
Manufacturer NTE Electronics
Description Silicon NPN Transistor
Published Sep 13, 2007
Detailed Description www.DataSheet4U.com NTE362 Silicon NPN Transistor RF Power Description: The NTE362 is designed for 7.0 to 15 volts, UHF...
Datasheet PDF File NTE362 PDF File

NTE362
NTE362

Overview
www.
DataSheet4U.
com NTE362 Silicon NPN Transistor RF Power Description: The NTE362 is designed for 7.
0 to 15 volts, UHF large signal amplifier applications required in industrial and commercial FM equipment operating in the 400 to 960MHz range.
Features: D D D D Specified 12.
5 Volt, 470MHz Characteristics Power Output = 2.
0 Watts Minimum Gain = 9.
0dB Efficiency = 60% Minimum RF ballasting provides protection against device damage due to load mismatch Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Emitter Voltage, VCEO .
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16V Collector−Base Voltage, VCBO .
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36V Emitter−Base Voltage, VEBO .
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4V Collector Current−Continuous, IC .
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0.
4V Total Device Dissipation (TC = +25°C, Note 1), PD .
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5.
0W Storage Temperature Range, Tstg .
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−65° to +200°C Stud Torque (Note 2) .
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6.
5 in−lbs Note 1.
These devices are designed for RF operation.
The total device dissipation rating applies only when the devices are operated as RF amplifiers.
Note 2.
For repeated assembly use 5 in−lbs.
Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter OFF Characteristics Collector−Emitter Breakdown Voltage Emitter−Base Breakdown Voltage Collector Cutoff Current V(BR)CEO IC = 50mA, IB = 0 V(BR)CES IC = 50mA, VBE = 0 V(BR)EBO IE = 1.
0mA, IC = 0 ICES ICBO VCE = 15V, VBE = ...


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