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LN66F
GaAs Infrared Light Emitting Diode
Description
Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode Unit : mm For light source of remote control systems Features High-power output, high-efficiency : Ie = 13.0 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors Narrow directivity : θ = 15 deg. (typ.) Transparent epoxy resin package 13.5±1.0 11.5±1.0 3.6±0.3 1.0 7.65±...
Panasonic Semiconductor
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