GaAlAs Infrared Light Emitting Diode
Description
Infrared Light Emitting Diodes
LN77L
GaAlAs Infrared Light Emitting Diode
Unit : mm
For optical control systems Features
High-power output, high-efficiency : PO = 18 mW (typ.) Fast response and high-speed modulation capability : fC = 20 MHz (typ.) Wide directivity : θ = 20 deg. (typ.) Transparent epoxy resin package
1.0 7.65±0.2
ø5.0±0.2
25.6±1.0 5.05±0....
Panasonic Semiconductor
LN77L PDF File
Similar Datasheet