PNP EPITAXIAL PLANAR TRANSISTOR
Description
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CORPORATION
G2N5401
Description Features
P NP EP ITAX I AL PL ANAR TANSI STOR
ISSUED DATE :2004/06/09 REVISED DATE :2004/11/29B
The G2N5401 is designed for general purpose applications requiring high breakdown voltages.
*Complementary to NPN Type G2N5551 *High Collector-Emitter Breakdown Voltage (VCEO=150V@IC=1mA))
Package Dimensions
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