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GC01L60

Part Number	GC01L60
Manufacturer	GTM
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Sep 19, 2007
Detailed Description	www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/09/14 REVISED DATE : GC01L60 N-CHANNEL ENHANCEMENT MODE ...
Datasheet	GC01L60 PDF File

Overview

www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2005/09/14 REVISED DATE : GC01L60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 600V 12 160mA The GC01L06 utilized advanced processing techniques to achieve the possible on-resistance, extremely efficient and cost-effectiveness device.
*Simple Drive Requirement *Low Gate Charge *Fast Switching Characteristics Description Features Package Dimensions D E S1 TO-92 A S E A T IN G PLANE b1 REF.
L e1 e b C A S1 b b1 C Millimeter Min.
Max.
4.
45 4.
7 1.
02 0.
36 0.
51 0.
36 0.
76 0.
36 0.
51 REF.
D E L e1 e Millimeter Min.
Max.
4.
44 4.
7 3.
30 3.
81 12.
70 1.
150 1.
390 2.
42 2.
66 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TA=25 ID @TA=100 IDM PD @TC=25 2 Ratings 600 30 160 100 300 0.
83 0.
5 1 -55 ~ +150 Unit V V mA mA mA W mJ A Total Power Dissipation Single Pulse Avalanche E...

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GC01L60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET - GTM

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