P-Channel E nhancement Mode Field Effect Transistor
Description
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S T U/D1855P L
S amHop Microelectronics C orp.
Arp,20 2005 ver1.1
P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
-55V
F E AT UR E S
( m W ) Max
ID
-15A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
68 @ V G S = -10V 85 @ V G S = -4.5V
R ugged and reliable. TO-252 and TO-251 P acka...
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