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GE60T03

GTM
Part Number GE60T03
Manufacturer GTM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 27, 2007
Detailed Description www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/11/22 REVISED DATE : GE60T03 N-CHANNEL ENHANCEMENT MODE ...
Datasheet PDF File GE60T03 PDF File

GE60T03
GE60T03

Overview
www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2005/11/22 REVISED DATE : GE60T03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 12m 45A The GE60T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converters.
*Low Gate Charge *Simple Drive Requirement *Fast Switching Speed *RoHS Compliant Description Features Package Dimensions REF.
A b c D E L4 L5 Millimeter Min.
Max.
4.
40 4.
80 0.
76 1.
00 0.
36 0.
50 8.
60 9.
00 9.
80 10.
4 14.
7 15.
3 6.
20 6.
60 REF.
c1 b1 L e L1 Ø A1 Millimeter Min.
Max.
1.
25 1.
45 1.
17 1.
47 13.
25 14.
25 2.
54 REF.
2.
60 2.
89 3.
71 3.
96 2.
60 2.
80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings 30 ±20 45 32 120 44 0.
352 -55 ~ +175 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Symbol Rthj-c Rthj-a Value 3.
4 62 Unit /W /W GE60T03 Page: 1/4 ISSUED DATE :2005/11/22 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min.
30 1.
0 Typ.
0.
03 25 11.
6 3.
9 7 8.
8 57.
5 18.
5 6.
4 1135 200 135 Max.
3.
0 ±100 1 250 12 25 19 1816 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=10A VGS= ±20V VDS=30V, VGS=0 VDS=24V, VGS=0 VGS=10V, ID=20A VGS=4.
5V, ID=15A ID=20A VDS=24V VGS=4.
5V VDS=15V ID=20A VGS=10V RG=3.
3 RD=0.
75 VGS=0V VDS=25V f=1.
0MHz Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward ...


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