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GE88LS02

Part Number	GE88LS02
Manufacturer	GTM
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Sep 27, 2007
Detailed Description	www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/01/05 REVISED DATE : GE88LS02 N-CHANNEL ENHANCEMENT MODE...
Datasheet	GE88LS02 PDF File

Overview

www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2006/01/05 REVISED DATE : GE88LS02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 5m 75A The GE88LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance.
The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converters.
*Low Gate Charge *Simple Drive Requirement *Fast Switching Description Features Package Dimensions REF.
A b c D E L4 L5 Millimeter Min.
Max.
4.
40 4.
80 0.
76 1.
00 0.
36 0.
50 8.
60 9.
00 9.
80 10.
4 14.
7 15.
3 6.
20 6.
60 REF.
c1 b1 L e L1 Ø A1 Millimeter Min.
Max.
1.
25 1.
...

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GE88LS02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET - GTM

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