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HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE
on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som
AR LIMIN
Y
MITSUBISHI HVIGBT MODULES
CM2400HC-34H
CM2400HC-34H
q IC ...........................................
