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GTC217E

Part Number	GTC217E
Manufacturer	GTM
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Oct 5, 2007
Detailed Description	www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/08/21 REVISED DATE :2006/12/25B GTC217E N-CHANNEL ENHANC...
Datasheet	GTC217E PDF File

Overview

www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2006/08/21 REVISED DATE :2006/12/25B GTC217E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 22m 7A The GTC217E used advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device.
The GTC217E is universally used for all commercial-industrial applications.
* Lower Gate Charge *Small Package Outline *RoHS Compliant Description Features Package Dimensions REF.
A A1 b c D Millimeter Min.
0.
05 0.
19 0.
09 2.
90 Max.
1.
20 0.
15 0.
30 0.
20 3.
10 REF.
E E1 e L S Millimeter Min.
6.
20 4.
30 0.
45 0° Max.
6.
60 4.
50 0.
75 8° 0.
65 BSC Absolute Maximum Ratings Parameter Drain-Sour...

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GTC217E N-CHANNEL ENHANCEMENT MODE POWER MOSFET - GTM

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