N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
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ISSUED DATE :2004/10/13 REVISED DATE :2006/12/25B
GTS217E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 22m 7A
The GTS217E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. *Low on-resistance *Capable of 2.5V gate drive *Optimal D...
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